期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 17, 期 24, 页码 16145-16150出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cp01823d
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资金
- National Research Foundation of Korea [22A20130012547, 2009-0093885] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Fluorine doped tin oxide (FTO) is widely used as a substrate in the synthesis of a photo-reactive semiconductor electrode for solar water splitting. The hematite film on the surface of the FTO substrate annealed at 700 degrees C showed an enhanced photocurrent value with a maximum photocurrent of 0.39 mA cm(-2) at 1.23 V vs. RHE under 1 sun illumination. This is a much enhanced photocurrent value of the hematite films than that of those annealed at temperatures lower than 700 degrees C. This is a promising approach for the enhancement of the photoelectrochemical properties of metal oxide thin films. This work reports on the mechanism of the annealing process of the synthesized hematite film to enhance the photocurrent value. Furthermore, this can be used for the enhanced efficiency of the solar water splitting reaction.
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