4.6 Article

Tunable electronic and magnetic properties of monolayer MoS2 on decorated AlN nanosheets: a van der Waals density functional study

期刊

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 17, 期 35, 页码 23207-23213

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cp02855h

关键词

-

资金

  1. National Natural Science Foundation of China (NSFC) [51177006, 51301020, 51471124]
  2. Natural Science Foundation of Shaanxi province, China [2014JQ6196]
  3. PhD Programs Foundation of Ministry of Education of China [20110201120002]
  4. special fund for basic scientific research of central colleges of Chang'an University [2013G1311053]
  5. National Training Programs of Innovation and Entrepreneurship for Undergraduates [201310710064]

向作者/读者索取更多资源

In this study, structural, electronic, and magnetic properties of monolayer MoS2 on decorated AlN nanosheets have been systematically investigated using density functional theory with van der Waals corrections. The results indicate that the surface microstructure of the AlN substrate and stacking patterns significantly affect the electronic and magnetic properties of heterostructures. Moreover, the n type semiconductor to p type semiconductor to metal transition accompanied with the nonmagnetic to magnetic transfer can be achieved for monolayer MoS2. The diverse electronic and magnetic properties highlight the potential of MoS2 nanosheets for applications in electronics and spintronics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据