期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 406, 期 -, 页码 102-106出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2014.09.055
关键词
ZnO; PCMO; Amorphous; Resistive switching; Optical transparent
资金
- National Basic Research Program of China [2012CB932702]
- National Science Foundation of China [11174031, 51371024, 51325101, 51271020]
- NCET
- PCSIRT
- Beijing Municipal Natural Science Foundation [2122037]
- Beijing Nova program [2011031]
- Fundamental Research Funds for the Central Universities
ZnO/Pr0.3Ca0.3MnO3 (ZnO/PCMO) amorphous thin films were grown on an indium-tin-oxide (ITO)/glass by pulsed laser deposition at room temperature. Interestingly, a stable bipolar resistive switching behavior of the ITO/ZnO/PCMO/ITO cell can be longer than 2.5 x 10(3) cycles. The on/off ratio of switching behaviors is as high as 10(4). The structure of ITO/ZnO/PCMO/ITO exhibits a high average transparency of 79.6% in the visible range with a maximum transparency of 84.6% at 590 nm wavelength. The conductive mechanism during switching cycling in our structure can be described by a trapped-control space charge limited current behavior. The ZnO/PCMO/ITO/glass structure shows a potential of the transparent memory for future invisible electronics devices. (C) 2014 Elsevier B.V. All rights reserved.
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