期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 17, 期 31, 页码 20160-20167出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cp03369a
关键词
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资金
- National 985 Project [30000-31101200]
- 863 Program [2014AA033002, 2015AA033408]
- Economic and Information Industry Commission of Guangdong Province
- Shunde Government, Guangdong Province, China [20140401]
- National Research Foundation of Korea (NRF) grant - Korean Government (MSIP) [NRF-2014R1A2A2A01007159]
- National Research Foundation of Korea [2014R1A2A2A01007159] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A simply and facilely synthesized MoO3 solution was developed to fabricate charge injection layers for improving the charge-injection properties in p-type organic field-effect transistors (OFETs). By dissolving MoO3 powder in ammonium (NH3) solvent under an air atmosphere, an intermediate ammonium molybdate ((NH4)(2)MoO4) precursor is made stable, transparent and spin-coated to form the MoO3 interfacial layers, the thickness and morphology of which can be well-controlled. When the MoO3 layer was applied to OFETs with a cost-effective molybdenum (Mo) electrode, the field-effect mobility (mu(FET)) was significantly improved to 0.17 or 1.85 cm(2) V(-1)s(-1) for polymer semiconductors, regioregular poly(3-hexylthiophene) (P3HT) or 3,6-bis-(5bromo-thiophen-2-yl)-N,N'-bis(2-octyl-1-dodecyl)-1,4-dioxo-pyrrolo[3,4-c]pyrrole (DPPT-TT), respectively. Device analysis indicates that the MoO3-deposited Mo contact exhibits a contact resistance R-C of 1.2 M Omega cm comparable to that in a device with the noble Au electrode. Kelvin-probe measurements show that the work function of the Mo electrode did not exhibit a dependence on the thickness of MoO3 film. Instead, ultraviolet photoemission spectroscopy results show that a doping effect is probably induced by casting the MoO3 layer on the P3HT semiconductor, which leads to the improved hole injection.
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