Advantages of GeTeN material for phase change memory applications

The nitrogen doped GeTe (GeTeN) thin film sputtered at a flow rate ratio (N-2/Ar) of 0.04, which proves to be outstanding in various properties comparing with GeTe, was investigated for the application of phase-change memory. The GeTeN film crystallizes into a rhombohedral structure at similar to 372 degrees C with no separated Te or Ge. A relatively wider optical band gap of GeTeN results in a lower threshold current. GeTeN material also has a better surface contact with surrounding materials than that of GeTe according to surface roughness and adhesive strength results, which further leads to more stable SET and RESET states for phase-change memory device. (C) 2011 Elsevier B.V. All rights reserved.