期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 358, 期 3, 页码 484-491出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2011.11.001
关键词
DI-SCLC; CELIV; ToF; OFET; OLED
资金
- FAPESP [07/06064-0, 09/05589-7]
- CAPES [222/08]
- CNPq (MCT/CT-INFO) [142302/2010-4]
- Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [09/05589-7] Funding Source: FAPESP
Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage - JxV) and transient (e.g. Time-of-Flight - ToF, Dark-Injection Space-Charge-Limited Current - DI-SCLC, Charge Extraction by Linearly Increasing Voltage - CELN) current techniques. Charge carrier mobility in nanometric films was best characterized through JxV and DI-SCLC. It approaches 10(-6) cm(2)Ns under a SCLC regime with deep traps for light-emitting diode applications. ToF measurements performed on micrometric layers (i.e. - 3 mu m) confirmed studies in 100 nm-thick films as deposited in OLEDs. All results were comparable to a similar poly(para-phenylene vinylene) derivative, MDMO-PPV. Electrical properties extracted from thin-film transistors demonstrated mobility dependence on carrier concentration in the channel (similar to 10(-7)-10(-4) cm(2)/Vs). At low accumulated charge levels and reduced free carrier concentration, a perfect agreement to the previously cited techniques was observed. Degradation was verified through mobility reduction and changes in trap distribution of states. (C) 2011 Elsevier B.V. All rights reserved.
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