Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application

A novel Heusler ferrimagnet Ti2MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin-gapless-semiconductor (SGS) nature of the stoichiometric Ti2MnAl, in agreement with theoretical prediction. The as-grown SGS-like Ti2MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor-like behavior at room temperature allowing good compatibility with commercial Si-based semiconductor. In this regards, Ti2MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim