期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 358, 期 17, 页码 2227-2231出版社
ELSEVIER
DOI: 10.1016/j.jnoncrysol.2012.01.048
关键词
Amorphous silicon-crystalline silicon heterojunction; DC saddle field PECVD; Planar conductance; Activation energy; Photovoltaics
The planar conductance technique has been previously used in the study of amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunctions, grown using conventional Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD), to examine the existence of a strong inversion layer at the c-Si surface. In the present study such measurements were undertaken on a series of heterojunctions in order to provide insight into the nature of the electrical interface between the hydrogenated amorphous silicon, deposited using the DC Saddle Field PECVD system, and the underlying crystalline silicon wafer. The films showed good passivation and a strong inversion layer, indicating their amenability for device applications. (C) 2012 Elsevier B.V. All rights reserved.
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