期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 354, 期 19-25, 页码 2787-2790出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2007.10.070
关键词
II-VI semiconductors; sputtering; indium tin oxide and other transparent conductors
ZnO-based transparent conducting oxide (TCO) thin films have received increased attention recently because of their potential to reduce production costs compared to those of the prevalent TCO indium tin oxide (ITO). Undoped ZnO and ZnO:Al (0.1, 0.2, 0.5, 1, and 2 wt% Al(2)O(3)) polycrystalline films were deposited by RF magnetron sputtering. Controlled incorporation of H(2) and O(2) in the Ar sputtering ambient was investigated. Though optimal substrate temperature was found to be 200 C for films grown in 100% Ar, the addition of H(2) permits improved electrical performance for room-temperature depositions. Temperature-dependent Hall data suggest that ionized impurity and acoustic phonon scattering dominate at high and intermediate carrier concentration levels respectively, with evidence of temperature-activated transport at the lowest levels. Lightly doped ZnO:Al demonstrates reduced infrared absorption compared to the standard 2 wt%-doped ZnO:Al, which may be beneficial to device performance. (C) 2008 Published by Elsevier B.V.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据