期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 354, 期 14, 页码 1549-1552出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2007.08.043
关键词
conductivity
The studies of electrical conductivity of NbN-SiO2 films are reported. To obtain these films, sol-gel derived xNb(2)O(5)-(100 - x)SiO2 (where x = 100, 90, 80, 70, 60, 50 mol%) coatings were nitrided at 1200 degrees C. The nitridation process leads to the formation of some disordered structures, with NbN metallic grains dispersed in insulating SiO2 matrix. The structure of the samples was studied using X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical conductivity was measured with the conventional four-terminal method in the temperature range from 5 to 280 K. The superconducting transition was not observed even for the sample that does not contain silica. All the samples exhibit negative temperature coefficient of resistivity. The results of conductivity versus temperature may be described on the grounds of a model proposed for a weakly disordered system. (C) 2007 Elsevier B.V. All rights reserved.
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