Studies on electrical and the dielectric properties in MS structures

In this study, we investigated frequency dependent electrical and dielectric properties of metal-semiconductor (MS) structures using capacitance-voltage (C-V) and conductance-voltage (Glco-V) characteristics in the frequency range 100 kHz-10 MHz in the room temperature. The dielectric constant (c) dielectric, loss (epsilon ''), dielectric loss tangent (tan delta) and ac electrical conductivity (sigma(ac)) were calculated from the C-V and G/omega-V measurements and plotted as a function of frequency. In general, epsilon', epsilon '' and tan delta values decreased with increasing the frequency, while 7 c increased with increasing frequency. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C-Vand G/omega-V measurements and plotted as functions of voltage and frequency. The distribution profile of R-S-V gives a peak in the depletion region at low frequencies and disappears with increasing frequencies. Also, series resistance values decreased with increasing frequency. The experimental results show that both frequency dependent electrical and dielectric parameters were strongly frequency and voltage dependent. (C) 2008 Elsevier B.V. All rights reserved.