期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 213, 期 2, 页码 302-305出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201532409
关键词
conductive bridging RAM; data retention; memory; RRAM
资金
- IMEC Core Partner Industrial Affiliation Program
In this work, we prove that, for a current regime of 10A and using industry-relevant programming pulse-width, Cu/Al2O3-based conductive-bridging RAM (CBRAM) cells ensure reliably larger memory window (MW) than state-of-the-art oxygen-vacancy-based RRAM (OxRRAM) cells. Due to the intrinsically stochastic nature of the switching mechanism, the R-on and R-off values can be widely distributed, especially in a low-current regime, drastically reducing the overall memory window. For this reason, in this study we adopt a statistical approach, focusing on the tails of the distributions. Using a program-verify method we show that the larger median MW in CBRAM allows to program a MW x10 using x10 shorter programming time with respect to OxRRAM. Moreover, we show that, in order to ensure a MW >x10 after a fixed retention time, the programming time needs to be several decades larger for OxRRAM than for CBRAM.
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