期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 212, 期 8, 页码 1704-1712出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201431850
关键词
aluminium; doping; ZnO; buffer layers; thin films; photodetectors
资金
- UGC New Delhi
- UGC New Delhi through UGC-BSR, JRF
ZnO and Al-doped ZnO (AZO) thin films were grown on the ZnO buffer layer by a chemical spray pyrolysis method. The metal-semiconductor-metal (MSM) UV photodetector based on ZnO thin films with two device configuration Ag/AZO/ZnO/Ag and Ag/ZnO/ZnO/Ag have been studied. AZO and ZnO thin films were grown on the ZnO buffer layer by a chemical spray pyrolysis technique. The effect of the buffer layer on the physicochemical and UV-sensing properties of the AZO and ZnO thin-film-based UV photodetectors were analyzed. The XRD results suggested that the buffer layer improves the crystalline quality of the ZnO thin films. The device with configuration Ag/AZO/ZnO/Ag exhibits a maximum photocurrent of about 876 mu A at 5V bias at 365nm peak wavelength. The linear I-V characteristic of the photodetector reveals the good ohmic contacts between metal-semiconductor junctions. The AZO-based UV photodetector with ZnO buffer layer shows a maximum photoresponsivity of about 340A/W, which is much higher than that of the ZnO-based UV photodetector with ZnO buffer layer. The photoresponse and photoswitching characteristics of the device demonstrate that a ZnO UV photodetector with a buffer layer offers a new way to fabricate devices on a buffer-layer-coated substrate.
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