期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 212, 期 5, 页码 947-953出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201431743
关键词
GaN; light-emitting diodes; InGaN; phonon-assisted transitions; trap-assisted tunneling
资金
- U.S. Army Research Laboratory through the Collaborative Research Alliance (CRA) for MultiScale multidisciplinary Modeling of Electronic materials (MSME)
In a combined experimental and numerical investigation, we present the effects of trap-assisted tunneling on the sub-threshold forward bias characteristics of a blue InGaN/GaN single-quantum-well LED test structure grown on a SiC substrate. The different role of donor- and acceptor-like traps has been studied, for the information it can provide on the role played by point defects. Using the energy E-t and trap density N-t as the only tunneling-related fitting parameters, the behavior of the measured I(V) curves is well reproduced by our model over a wide current and temperature range. The very good agreement between simulations and experiments suggests that trap-assisted forward tunneling is one of the most relevant contributions to the current flow below the optical turn-on of the diode.
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