期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 212, 期 7, 页码 1571-1577出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201532328
关键词
atmospheric-pressure plasma; silicon; silicon oxide; thin film transistors
资金
- KAKENHI from the Ministry of Education, Culture, Sports, Science, and Technology [20676003, 26249010]
- Grants-in-Aid for Scientific Research [26249010, 20676003] Funding Source: KAKEN
Silicon (Si) and its alloys, such as silicon oxides (SiOx) and silicon nitrides, are indispensable thin film materials for the fabrication of large-area electronic devices. The goal of the present study is to develop a highly efficient deposition technology for good-quality hydrogenated amorphous Si (a-Si), microcrystalline Si (mu c-Si), and SiOx films onflexible polymer substrates. For this purpose, we have been using atmospheric-pressure (AP) plasma excited by a 150MHz very high-frequency (VHF) power. The changes of thickness and structure of the Si and SiOx films in the gas flow direction were studied as a function of distance from the plasma entrance, VHF power density, and gas flow rates. Based on the results, the performance of bottom-gate TFTs with the Si channel and SiOx gate insulator layers being deposited using AP-VHF plasma were examined to test the applicability of the Si and SiOx films to actual TFTs. A TFT with a field-effect mobility of similar to 1.7 cm(2)V(-1)s(-1) was obtained at a temperature of 120 degrees C. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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