期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 212, 期 12, 页码 2837-2842出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201532292
关键词
metal-rich growth; molecular beam epitaxy; scandium gallium nitrides; thin films; transmission electron microscopy
资金
- Royal Society University Research Fellowship
- ERC
- Engineering and Physical Sciences Research Council [EP/I036052/1] Funding Source: researchfish
- EPSRC [EP/I036052/1] Funding Source: UKRI
Epitaxial ScxGa1-xN films with 0 <= x <= 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The ScxGa1-xN growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N-2 induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite ScxGa1-xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metal-rich conditions can help to stabilise wurtzite phase ScxGa1-xN. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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