Comprehensive study of a 4H-SiC MES-MOSFET

In this paper, we studied the enhancement of the breakdown voltage in the 4H-SiC MESFET-MOSFET (MES-MOSFET) structure which we have proposed in our previous work. We compared this structure with Conventional Bulk-MOSFET (CB-MOSFET) and Field plated Conventional Bulk-MOSFET (FCB-MOSFET) structures. The 4H-SiC MES-MOSFET structure consists of two additional schottky buried gates which behave like a Metal on Semiconductor (MES) at the interface of the active region and substrate. The motivation for this structure was to enhance the breakdown voltage by introducing a new technique of utilizing the reduced surface field (RESURF) concept. In our comparison and investigation we used a two-dimensional device simulator. Our simulation results show that the breakdown voltage of the proposed structure is 3.7 and 2.9 times larger than CB-MOSFET and FCB-MOSFET structures, respectively. We also showed that the threshold voltage and the slope of drain current (ID) as a function of drain-source voltage (V-DS) for all the structures is the same. (C) 2015 Elsevier B.V. All rights reserved.