期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 12, 期 11, 页码 8522-8525出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2012.6675
关键词
Graphene-Oxide; Spin-Coating; Resistive Switching Behavior
类别
资金
- National Research Foundation of Korea [2009-0087091, 2011-0015829]
- Jeju Sea Grant College Program
- Ministry of Land, Transport and Maritime Affairs (MLTM), Korea
- KSTG seed money grant [KU/Reg/D(R)/OO/12/29]
- DST Nanomission, New Delhi
In this paper, we report highly stable and bipolar resistive switching effects of Ag/Graphene oxide thinfilm/Ag devices. The graphene-oxide (GO) thinfilms were prepared on Ag/SiO2/Si substrates by spin-coating technique. The Ag/GO/Ag devices showed a steady and bipolar resistive switching characteristic. The resistance switching from low resistance state (LRS) and high resistance state (HRS) with the resistance ratio of HRS to LRS of about 10 which was attained at a voltage bias of 0.1 V. Based on the filamentary conduction model, the dominant conduction mechanism of switching effect was well explained. Our results show GO can be a promising candidate for future development of nonvolatile memory devices.
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