4.2 Article

Visualizing Topological Insulating Bi2Te3 Quintuple Layers on SiO2-Capped Si Substrates and Its Contrast Optimization

期刊

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 11, 期 8, 页码 7042-7046

出版社

AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2011.4205

关键词

Bismuth Telluride; Optical Contrast; Few-Layer Material; Topological Insulator; Graphene

资金

  1. National Natural Science Foundation of China [90606002, 11075076, 10775070, 10904065, 11023002]
  2. National Key Projects for Basic Research of China [2009CB930501, 2010CB923401]
  3. Program for New Century Excellent Talents in University of China [NCET-07-0422]

向作者/读者索取更多资源

Thin Bi2Te3 flakes, with as few as 3 quintuple layers, are optically visualized on the SiO2-capped Si substrates. Their optical contrasts vary with the illumination wavelength, flake thickness and capping layers. The maximum contrast appears at the optimized light with the 570 nm wavelength. The contrast turns reversed when the flake is reduced to less than 20 quintuple layers. A calculation based on the Fresnel law describes the above observation with the constructions of the layer number-wave length-contrast three-dimensional (3D) diagram and the cap thickness-wavelength-contrast 3D diagram, applicative in the current studies of topological insulating flakes.

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