期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 10, 期 1, 页码 599-603出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2010.1590
关键词
Al Nanocrystal; Charging Effect
类别
资金
- Singapore Millennium Foundation
- Ministry of Education, Singapore [ARC 1/04]
In this work, the Al-rich AIN thin film is deposited on Si substrate by radio frequency (RF) sputtering to form a metal-insulator-semiconductor (MIS) structure. Al nanocrystals (nc-Al) are formed and embedded in the AIN thin film. Charge trapping/detrapping in the nc-Al leads to a shift in the flat-band voltage (V(FB)) of the MIS structure. The charge storage ability of the AIN thin films containing Al nanocrystals provides the possibility of memory applications. On the other hand, charge trapping in nc-Al reduces the current conduction because of the breaking of some tunneling paths due to Coulomb blockade effect and the current conduction evolves with a trend towards one-dimensional transport.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据