4.2 Article

Control of Single-Electron Charging of Metallic Nanoparticles onto Amorphous Silicon Surface

期刊

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 8, 期 11, 页码 5684-5689

出版社

AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2008.214

关键词

Quantized Double-Layer Charging; Nanoparticles; Amorphous Silicon; Langmuir-Blodgett Layers; Voltammetry

资金

  1. APVV [51-013904, 20-017304, 20-029804, LPP-0080-06]
  2. VEGA [2/7118/27, 1/3038/25, 2/6030/26, 2/7013/27, 1/2041/25]
  3. Center of Excellence SAS [CE-PI I/2/2006]

向作者/读者索取更多资源

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

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