4.1 Article

Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning

期刊

JOURNAL OF NANOPHOTONICS
卷 3, 期 -, 页码 -

出版社

SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.3085990

关键词

quantum dot; diblock copolymer nanopatterning; selective growth; MOCVD

资金

  1. ARO MURI [W911NF-05-1-0262]
  2. NSF NSEC

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an alternate Quantum Dot (QD) fabrication method to self-assembled SK mode QDs, diblock copolymer nano-patterned QDs were investigated. By employing selective growth of QDs on diblock copolymer nano-patterned masks, independence from the problematic wetting layer and controllability on QD size and distribution associated with SK growth mode QDs were realized. The diblock copolymer nano-patterned masks were fabricated using a diblock copolymer template and a dielectric mask, and InxGa1-xAs QDs were selectively grown on patterned GaAs and InP substrates by Metalorganic Chemical Vapor Deposition (MOCVD). The optical properties from diblock copolymer patterned QDs on III-V substrates were investigated at low temperature.

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