期刊
JOURNAL OF NANOPARTICLE RESEARCH
卷 16, 期 11, 页码 -出版社
SPRINGER
DOI: 10.1007/s11051-014-2619-4
关键词
Gallium nitride; Nanopowders; Semiconducting; X-ray diffraction; Photoluminescence
资金
- NSFC [21161016]
- Foundations from Department of Education [KJLD14087, GJJ14714]
- NSFJXP [20142BAB216013]
By using Na3PO4 as a dispersant, soluble salt-assisted route has been further developed to prepare high-crystalline GaN nanoparticles powder on a large scale through the direct nitridation of Ga-Na3PO4 mixture at 750-950 degrees C and followed by washing with water. The systematical characterizations including XRD, Raman, IR, TEM, XPS, and PL spectrum showed that the as-prepared nanopowders were composed of nanoparticles in diameters of 8-18 nm, hexagonal phase, pure GaN, and had a broad UV centered at 388 nm and blue emissions band centered at around 547 nm. Because of the utilization of the simple reaction between metallic Ga and NH3, the preparation of pure GaN nanopowders becomes very easy, economical, and scalable, suggesting broad application in optoelectronic device material. The interesting results indicate the wide range of soluble salt-assisted route for promising industrial production of GaN nanopowders.
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