期刊
JOURNAL OF NANOPARTICLE RESEARCH
卷 15, 期 11, 页码 -出版社
SPRINGER
DOI: 10.1007/s11051-013-2063-x
关键词
Si nanocrystal; Electroluminescence; Photoluminescence; Carrier transport; Modeling and simulation
资金
- National Basic Research Program of China (973 Program) [2012CB934303]
- National Natural Science Foundation of China [61275178, 10974034]
- Department of Science and Technology of Guizhou province and Guizhou Minzu University [LKM[2012]22]
Spectral shift, especially blueshift, in peak position of electroluminescence (EL) spectrum of Si nanocrystal (Si-nc) with respect to its photoluminescence (PL) counterpart has been often observed. Explanations for the spectral difference are different for different EL mechanisms adopted. To gain a relevant picture of the EL process, in this work, we analyze three EL mechanisms that are mainly applied nowadays, i.e., the model of defect light emission, that of band-filling, and that of Si-nc size selection by the carrier energy. Different Si-nc samples and working conditions are designed and their EL and PL emissions monitored according to the predictions of the three models. It is concluded that the observed EL is mainly of Si-nc-related origin. The experimental results are more consistent with the model of Si-nc size selection.
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