期刊
JOURNAL OF NANOMATERIALS
卷 2012, 期 -, 页码 -出版社
HINDAWI LTD
DOI: 10.1155/2012/189279
关键词
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资金
- Universiti Teknologi MARA (UiTM), Malaysia
- Jabatan Perkhidmatan Awam (JPA), Malaysia
- Research Management Institute (RMI) of UiTM
- Ministry of Higher Education of Malaysia
We have fabricated metal-semiconductor-metal-(MSM-) type ultraviolet (UV) photoconductive sensors using aluminium-(Al-) doped zinc oxide (ZnO) nanorod arrays that were annealed in different environments: air, oxygen, or a vacuum. The Al-doped ZnO nanorods had an average diameter of 60 nm with a thickness of approximately 600nm that included the seed layer (with thickness similar to 200 nm). Our results show that the vacuum-annealed nanorod-array-based UV photoconductive sensor has the highest photocurrent value of 2.43 x 10(-4) A. The high photocurrent is due to the high concentration of zinc (Zn) interstitials in the vacuum-annealed nanorod arrays. In contrast, the oxygen-annealing process applied to the Al-doped ZnO nanorod arrays produced highly sensitive UV photoconductive sensors, in which the sensitivity reached 55.6, due to the surface properties of the oxygen-annealed nanorods, which have a higher affinity for oxygen adsorption than the other samples and were thereby capable of reducing the sensor's dark current. In addition, the sensor fabricated using the oxygen-annealed nanorod arrays had the lowest rise and decay time constants. Our result shows that the annealing environment greatly affects the surface condition and properties of the Al-doped ZnO nanorod arrays, which influences the performance of the UV photoconductive sensors.
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