期刊
JOURNAL OF NANOMATERIALS
卷 2011, 期 -, 页码 -出版社
HINDAWI LTD
DOI: 10.1155/2011/903176
关键词
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资金
- National Science Council [NSC 95-2221-E-006-314, NSC 95-2221-E-006-357-MY3]
- Center for Frontier Materials and Micro/Nano Science and Technology
- National Cheng Kung University, Taiwan [D97-2700]
- Advanced Optoelectronic Technology Center
- National Cheng Kung University under Ministry of Education
The fabrication and characteristics of grown ZnO nanowire/p-GaN heterojunction light-emitting diodes are reported. Vertically aligned ZnO nanowire arrays were grown on a p-GaN substrate by thermal chemical vapor deposition in quartz tube. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room temperature electroluminescent emission peak at 425 nm was attributed to the band offset at the interface between the n-ZnO nanowire and p-GaN and to defect-related emission from GaN; it was also found that the there exist the yellow band in the hetrojunction. It would be attributed to the deep defect level in the heterojunction.
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