期刊
JOURNAL OF MICROSCOPY
卷 241, 期 1, 页码 9-12出版社
WILEY
DOI: 10.1111/j.1365-2818.2010.03453.x
关键词
Hard X-ray microscopy; microelectronics; nondestructive imaging; ptychography
类别
资金
- German Ministry of Education and Research (BMBF) [05KS7OD1]
- Impuls- und Vernetzungsfonds (IVF) of the Helmholtz-Society [VI-203]
P>We used hard X-ray scanning microscopy with ptychographic coherent diffraction contrast to image a front-end processed passivated microchip fabricated in 80 nm technology. No sample preparation was needed to image buried interconnects and contact layers with a spatial resolution of slightly better than 40 nm. The phase shift in the sample is obtained quantitatively. With the additional knowledge of the elemental composition determined in parallel by X-ray fluorescence mapping, quantitative information about specific nanostructures is obtained. A significant enhancement in signal-to-noise ratio and spatial resolution is achieved compared to conventional hard X-ray scanning microscopy.
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