期刊
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
卷 24, 期 7, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0960-1317/24/7/075023
关键词
high electron mobility transistor; biomolecule-gate; biosensor; prostate cancer screening
类别
资金
- NSFC [61104226]
- National Basic Research Program of China [2010CB934700]
- CAS [YZ201152]
In order to improve the sensitivity of AlGaN/GaN high electron mobility transistor (HEMT) biosensors, a simple biomolecule-gated AlGaN/GaN HEMT structure was designed and successfully fabricated for prostate specific antigen (PSA) detection. UV/ozone was used to oxidize the GaN surface and then a 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer was bound to the sensing region. This monolayer serves as a binding layer for attachment of the prostate specific antibody (anti-PSA). The biomolecule-gated AlGaN/GaN HEMT sensor shows a rapid and sensitive response when the target prostate-specific antigen in buffer solution was added to the antibody-immobilized sensing area. The current change showed a logarithm relationship against the PSA concentration from 0.1 pg/ml to 0.993 ng/ml. The sensitivity of 0.215% is determined for 0.1 pg/ml PSA solution. The above experimental result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for prostate cancer screening.
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