期刊
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
卷 22, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0960-1317/22/4/045001
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资金
- Center for Nanoscale Mechatronics and Manufacturing of the Korea Institute of Machinery and Materials
- National Science Foundation, USA [ECCS 1028521]
- United Technology Corporation [10-S587-031-01-C6]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1028521] Funding Source: National Science Foundation
We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si3N4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K)(-1) at zero strain to 0.34 W (m K)(-1) at about 2.4% tensile strain. We propose that such strong strain-thermal conductivity coupling is due to strain effects on fraction-phonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens.
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