期刊
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
卷 22, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0960-1317/22/5/055012
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资金
- Academic Research Committee (ARC) at the National University of Singapore [MOE2009-T2-2-011 (R-263000598112)]
- A*STAR, SERC [0921480070, 1021650084, 1021010022, 1021520013]
- Electrical and Computer Engineering Department of National University of Singapore
A pressure sensor with a 200 mu m diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized. The SiNWs are embedded in a multilayered diaphragm structure comprising silicon nitride (SiNx) and silicon oxide (SiO2). Optimizations were performed on both SiNWs and the diaphragm structure. The diaphragm with a 1.2 mu m SiNx layer is considered to be an optimized design in terms of small initial central deflection (0.1 mu m), relatively high sensitivity (0.6% psi(-1)) and good linearity within our measurement range.
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