期刊
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
卷 22, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0960-1317/22/5/055021
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资金
- Technology Development Centre of Finland (TEKES)
- Technical Research Centre of Finland (VTT)
- ENIAC-EU E3CAR [120001]
This paper presents the fabrication and the electrical characterization of poly-Si filled through-silicon vias, which were etched in a 180 mu m thin silicon device wafer, bonded to a handle wafer by plasma activated oxide-to-silicon bonding. Heavily doped poly-Si was used as interconnection material, which was deposited by low-pressure chemical vapor deposition. Two different via geometries, i.e. stadium shaped, and circular shaped, were tried. Sputtered aluminum metallization layers as double-side redistribution lines and contact pads, were used. Both Kelvin structures and daisy chains were fabricated and their electrical resistances were measured. The electrical resistance of a single stadium-shaped via was measured to be about 24 Omega. The electrical resistance was varying from 60 Omega to 90 Omega for two-vias daisy chains. Measured results indicate that this via-first technology can be used for varying range of sensor applications like microphone, oscillator, resonator, etc where CMOS compatibility and high temperature processing are the prime requirements.
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