Characterization of heavily doped polysilicon films for CMOS-MEMS thermoelectric power generators

This paper presents the material characterization of boron- and phosphorus-doped LPCVD polysilicon films for the application of thermoelectric power generators. Electrical resistivity, Seebeck coefficient and thermal conductivity of polysilicon films doped with doses from 4 x 10(15) to 10 x 10(15) at cm(-2) have been measured at room temperature. Specific contact resistance between polysilicon and aluminum is studied and nickel silicidation is formed to reduce the contact resistance. The overall thermoelectric properties, as characterized by the figure of merit, are reported for polysilicon doped with different doping concentrations. For the most heavily doping dose of 10 x 10(15) at cm(-2), figure of merit for p- and n-type polysilicon is found as 0.012 and 0.014, respectively. Based on the characterization results, a CMOS compatible thermoelectric power generator composed of boron- and phosphorus-doped polysilicon thermopiles is fabricated. When 5 K temperature difference is maintained across two sides of a device of size of 1 cm(2), the output power is 1.3 mu W under a matched electrical resistance load.