期刊
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
卷 19, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0960-1317/19/12/125029
关键词
-
类别
资金
- A*STAR HOME 2015 National Research Programme (SERC) [0621150043]
- Institute of Microelectronics, A*STAR
This paper presents the material characterization of boron- and phosphorus-doped LPCVD polysilicon films for the application of thermoelectric power generators. Electrical resistivity, Seebeck coefficient and thermal conductivity of polysilicon films doped with doses from 4 x 10(15) to 10 x 10(15) at cm(-2) have been measured at room temperature. Specific contact resistance between polysilicon and aluminum is studied and nickel silicidation is formed to reduce the contact resistance. The overall thermoelectric properties, as characterized by the figure of merit, are reported for polysilicon doped with different doping concentrations. For the most heavily doping dose of 10 x 10(15) at cm(-2), figure of merit for p- and n-type polysilicon is found as 0.012 and 0.014, respectively. Based on the characterization results, a CMOS compatible thermoelectric power generator composed of boron- and phosphorus-doped polysilicon thermopiles is fabricated. When 5 K temperature difference is maintained across two sides of a device of size of 1 cm(2), the output power is 1.3 mu W under a matched electrical resistance load.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据