4.4 Article

The fabrication of patternable silicon nanotips using deep reactive ion etching

出版社

IOP PUBLISHING LTD
DOI: 10.1088/0960-1317/18/7/075007

关键词

-

资金

  1. National Research Foundation of Korea [R01-2007-000-11051-0, 과C6B1811] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This paper presents a novel fabrication method of patternable silicon nanotips. The proposed fabrication method involves four steps: lithography, the first deep reactive ion etching (DRIE), removal of the photoresist and the second DRIE. The fabricated silicon nanotips are well aligned along the edges of microstructures. The plane shape of the microstructure was determined by the patterned shape of the photoresist. It means that the silicon nanotips can be patterned by the patterned shape of the photoresist. The width of the nanotips, 1 mu m below the top, was measured to be about 200 nm. The fabricated nanotips were applied to modify the surface of silicon from hydrophilic to superhydrophobic. The contact angle was drastically increased from 79.7 degrees (bare silicon surface) to 158.3 degrees (surface modified with nanotips). Therefore, the surface was modified from hydrophilic to superhydrophobic.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据