期刊
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 23, 期 6, 页码 1396-1407出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2014.2313635
关键词
Piezoresistance; silicon nanowires (SiNWs); pressure sensor; annular groove; low pressure; biomedical
类别
资金
- Science and Engineering Research Council (SERC), Agency for Science, Technology, and Research [1021710159, 1220103064]
We present a nanoelectromechanical system piezoresistive pressure sensor with annular grooves on the circular diaphragm where silicon nanowires (SiNWs) are embedded as sensing elements around the edge. In comparison with our previous flat diaphragm pressure sensor, this new diaphragm structure enhances the device sensitivity by 2.5 times under pressure range of 0-120 mmHg. By leveraging SiNWs as piezoresistors, this improvement is even remarkable in contrast to other recently reported piezoresistive pressure sensing devices. In addition, with the miniaturized sensing diaphragm (radius of 100 mu m), the sensor can be potentially used as implantable device for low-pressure sensing applications.
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