期刊
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 23, 期 2, 页码 324-333出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2013.2273362
关键词
3D magnetometer; magnetic material; MEMS; silicon strain gauge
类别
资金
- French National Research Agency (ANR) [ANR-09-NIRT-001]
We report on the design, fabrication, and characterization of a microfabricated 3D magnetic field sensor that is suitable for co-integration with inertial sensors to form single-chip inertial measurement units. In contrast to classical resonant MEMS magnetometers, which are based on Lorentz force measurement, our sensor uses permanent magnetic materials and piezoresistive detection with silicon strain gauges of nanometric section, leading to low power consumption and high sensitivity for small sensor size. Thin multilayers of CoFe and PtMn as ferro- and antiferromagnetic materials are integrated within the MEMS fabrication process. Sensitivities of 1.09 V/T for x-and y-components of the magnetic field and 0.124 V/T for z-component of the magnetic field were measured, respectively. To be sensitive to magnetic fields along all three spatial directions, two permanent magnetization directions on the same die are required. Implementation of the two magnetization directions was validated by a measured correlation of 99.7% between x-and y-sensitivity axes. Power consumption of the 3D sensor is < 30 mu W for polarization with a 100 mu A dc current. With resolutions of 100 nT/root Hz for x- and y- component of the magnetic field and 350 nT/root Hz for z-component, the sensor is suitable for precise measurement of earth magnetic field. [2012-0191]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据