期刊
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 22, 期 1, 页码 71-79出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2012.2215012
关键词
Magnetoelectric (ME); magnetostriction; ME flexural gate transistor (MEFGT); Metglas (Fe0.85B0.05Si0.1) thin films; microelectromechanical systems (MEMS)
类别
资金
- National Science Foundation [ECCS-0824202]
- Material Research Science and Engineering Center [DMR-0820404]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0824202] Funding Source: National Science Foundation
Magnetic sensors capable of detecting tiny ac magnetic fields ranging from microtesla to picotesla are of great interest. In this paper, we demonstrate an integrated magneto-electric (ME) flexural gate transistor with nanotesla magnetic field detection sensitivity at room temperature. The device capacitively couples a Metglas (Fe0.85B0.05Si0.1)-based magnetostrictive unimorph micromechanical cantilever beam to the gate of an n-channel field-effect transistor. Using this sensor configuration, a sensitivity of 0.23 mV/mu T and a minimum detectable field of 60 nT/root Hz at 1 Hz and 1.5 mV/mu T and 150 pT/root Hz at the flexural resonance of the cantilever structure of 4.9 kHz were obtained. The results demonstrate a significant improvement in the thin-film ME sensor integration with standard CMOS process and open the possibility of monolithic magnetic sensor arrays fabrication for biomedical imaging applications.
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