4.5 Article

A Bistable Electrostatic Silicon Nanofin Relay for Nonvolatile Memory Application

期刊

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 22, 期 5, 页码 1004-1006

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2013.2266859

关键词

Nanoelectromechanical systems; relay; switch; van der Waals; nonvolatile memory; Bistable; electrostatic

资金

  1. SERC of the Agency for Science, Technology and Research [1021010022]

向作者/读者索取更多资源

We present a nanoelectromechanical (NEM) relay that is capable of demonstrating two stable states without on-hold power due to the influence of van der Waals force. This is realized by leveraging a silicon nanofin (SiNF) as a relay that can switch between two lateral terminals. The smallest dimension of the SiNF is 80-nm width by 2-mu m length. The SiNF is able to maintain its geometrical position even after the bias voltage is turned off. Bistable hysteresis behavior with pull-in voltage (V-PI) and reset voltage (V-RESET) as low as 8.4 and 10.1 V is measured. The nanoscale footprint of this device shows great potential for high-density nonvolatile memory applications. [2013-0109]

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