期刊
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 21, 期 3, 页码 688-701出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2012.2189360
关键词
Capacitive transduction; CMOS-MEMS; frequency tuning; micromechanical resonator; monolithic integration; RF-MEMS; temperature compensation
类别
资金
- National Science Council (NSC) of Taiwan [NSC-100-2221-E-007-033]
- Toward World-Class University
Integrated CMOS-MEMS free-free beam resonators using pull-in mechanism to enable deep-submicrometer electrode-to-resonator gap spacing without interference in their mechanical boundary conditions (BCs) have been demonstrated simultaneously with low motional impedance and high Q. The key to attaining high Q relies on a decoupling design between pull-in frames for gap reduction and mechanical BCs of resonators. In addition, the use of metal-SiO2 composite structures has been proved to greatly benefit the thermal stability of CMOS-MEMS resonators. Furthermore, tuning electrodes underneath pull-in frames were designed to offer quasi-linear frequency tuning capability where linear relationship between tuning voltage and frequency was achieved. In this paper, CMOS-MEMS free-free beam resonators with gap spacings of 110, 210, and 275 nm, respectively, were tested under direct one-port measurement in vacuum, demonstrating a resonator Q greater than 2000 and a motional impedance as low as 112 k Omega and, at the same time, allowing quasi-linear frequency tuning to achieve a total tuning range of 5000 ppm and a sensitivity of 83.3 ppm/V at 11.5 MHz with zero dc power consumption. Such a resonator monolithically integrated with a CMOS amplifier, totally occupying a die area of only 300 mu m x 130 mu m, was also tested with enhanced performance, benefiting future timing reference and RF synthesizing applications. [2011-0223]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据