期刊
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 18, 期 2, 页码 308-315出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2008.2011703
关键词
Grayscale lithography; microelectromechanical systems (MEMS); micromachining; three-dimensional (3-D) lithography
类别
资金
- U.S. Army Research Laboratory Collaborative Technology Alliance, Power and Energy Program
- NASA Goddard Space Flight Center
A double-exposure grayscale photolithography technique is developed and demonstrated to produce three-dimensional (3-D) structures with a high vertical resolution. Pixelated grayscale masks often suffer from limited vertical resolution due to restrictions on the mask fabrication. The double-exposure technique uses two pixelated grayscale mask exposures before development and dramatically increases the vertical resolution without altering the mask fabrication process. An empirical calibration technique was employed for mask design and was also applied to study the effects of exposure time and mask misalignment on the photoresist profile. This technology has been demonstrated to improve the average step between photoresist levels from 0.19 to 0.02 mu m and the maximum step from 0.43 to 0.2 mu m compared to a single pixelated exposure using the same mask design.
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