4.6 Article

Effects of Sn grain size on intermetallic compounds formation in 5 mu m diameter Cu/Sn pillar bumps

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Review Nanoscience & Nanotechnology

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)

Wen-Wei Shen et al.

NANOSCALE RESEARCH LETTERS (2017)

Article Nanoscience & Nanotechnology

Effect of Sn grain orientation on formation of Cu6Sn5 intermetallic compounds during electromigration

Yu-An Shen et al.

SCRIPTA MATERIALIA (2017)

Review Nanoscience & Nanotechnology

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)

Wen-Wei Shen et al.

NANOSCALE RESEARCH LETTERS (2017)

Review Engineering, Electrical & Electronic

A Review of Failure Analysis Methods for Advanced 3D Microelectronic Packages

Yan Li et al.

JOURNAL OF ELECTRONIC MATERIALS (2016)

Article Chemistry, Physical

Investigation of diffusion behavior in Cu-Sn solid state diffusion couples

Yuan Yuan et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2016)

Article Materials Science, Multidisciplinary

Materials challenges in three-dimensional integrated circuits

Kuan-Neng Chen et al.

MRS BULLETIN (2015)

Article Materials Science, Multidisciplinary

Effects of anisotropic β-Sn alloys on Cu diffusion under a temperature gradient

Wei-Neng Hsu et al.

ACTA MATERIALIA (2014)

Article Engineering, Electrical & Electronic

EBSD Investigation of Cu-Sn IMC Microstructural Evolution in Cu/Sn-Ag/Cu Microbumps During Isothermal Annealing

S. J. Wang et al.

JOURNAL OF ELECTRONIC MATERIALS (2014)

Review Engineering, Electrical & Electronic

Three-Dimensional and 2.5 Dimensional Interconnection Technology: State of the Art

Dapeng Liu et al.

JOURNAL OF ELECTRONIC PACKAGING (2014)

Article Engineering, Electrical & Electronic

Single-joint shear strength of micro Cu pillar solder bumps with different amounts of intermetallics

Y. J. Chen et al.

MICROELECTRONICS RELIABILITY (2013)

Article Physics, Applied

Electromigration in Sn-Cu intermetallic compounds

C. C. Wei et al.

JOURNAL OF APPLIED PHYSICS (2009)