Study of microstructural, optical and electrical properties of Mg dopped SnO thin films

Mg doped SnO thin films were fabricated via electron beam evaporator on the glass substrate. The XRD analysis showed that reference and Mg doped SnO thin films were consisted of tetragonal alpha-SnO phase with preferred directions along (101) and (002) orientations. It was observed that the intensity of the diffraction pattern peaks increased and crystallite size decreased with the Mg doping. Scanning electron microscopy showed that the needle-like particles having length in the range of 0.4-0.6 mu m with a diameter of 0.1-0.2 mu m are sintered together to form a compact structure of Sn1-xMgxO layer. In the Raman spectrum, two active mode (A(2u) and E-u) were observed for Sn1-xMgxO thin films. The complex plot (Nyquist plot) showed the data point laying on a single semicircle and the dc resistance increases with the increase of Mg doping concentration.