期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 25, 期 2, 页码 1097-1104出版社
SPRINGER
DOI: 10.1007/s10854-013-1693-1
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2010-0026163]
- Jeju National Universtiy
- National Research Foundation of Korea [21A20130012366, 2010-0026163] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Graphene-based composites represent a new class of materials with potential for many applications. Metal, semiconductor, or any polymer properties can be tuned by attaching it to graphene. Here, a new route for fabrication of graphene based composites thin films has been explored. Graphene flakes (< 4 layers) and a well-known semiconductor zinc oxide (ZnO) (< 50 nm particle size) have been dispersed in N-methylpyrrolidone and ethanol, respectively. Thin film of graphene flakes is deposited and decorated with ZnO nanoparticles to fabricate graphene/ZnO composite thin film on silicon substrate by electro hydrodynamic atomization technique. Graphene/ZnO composite thin film has been characterized morphologically, structurally and chemically. To investigate electronic behavior of the composite thin film, it is deployed as cathode in a diode device i.e. indium tin oxide/poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate)/polydioctylfluorene-benzothiadiazole/(graphene/ZnO). The J-V analysis of diode device has shown that at voltage of 1 V, the current density in organic structure is at low value of 4.69 x 10(-3) A/cm(2) and when voltage applied voltage is further increased; the device current density has increased by the order of 200 that is 1.034 A/cm(2) at voltage of 12 V.
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