Aluminum-doped zinc oxide films grown by atomic layer deposition for transparent electrode applications

We obtained zinc oxide films doped with aluminum using atomic layer deposition (ALD). Their morphology, growth mode, optical and electrical properties are studied. Al content dependence is analyzed. Carrier scattering mechanisms in ZnO:Al (AZO) films are investigated from conductivity versus temperature measurements. We also discuss how the film thickness affects its resistivity and optical transmission. The obtained film resistivities, i.e. 7 x 10(-4) Omega cm, belong to the lowest reported so far for transparent ZnO:Al films grown by the ALD method.