Preparation of highly transparent conductive Al-doped ZnO thin films and annealing effects on properties

Aluminum-doped ZnO (ZAO) thin films were deposited on fused quartz substrates by radio frequency sputtering in pure argon ambient at 450 A degrees C. Effects of in situ annealing temperature and annealing atmosphere on microstructure, electrical and optical properties of ZAO films have been investigated. Results showed that as-grown film without annealing treatments attained lowest resistivity of 1.1 x 10(-4)Omega cm. And all films performed high average transmittance greater than 90% in visible region. X-Ray diffraction (XRD), photoluminescence (PL), X-ray photoelectron spectroscopy (XPS) were utilized to characterize the microstructure properties of films. XRD results indicated that as-grown film had higher crystalline quality and larger grain size than annealed films. Al atoms replaced Zn efficiently to provide electrons stable in all samples. PL spectra revealed that high annealing temperature and oxygen atmosphere would generate more Zn vacancy (V-Zn) and oxide antisite defect (O-Zn), respectively and composition content results from XPS provided supports to this.