期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 20, 期 11, 页码 1140-1143出版社
SPRINGER
DOI: 10.1007/s10854-008-9840-9
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资金
- HFUT RenCai Foundation [103-035006, 103-035034]
- Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry
- open fund of State Key Laboratory of New Ceramics and Fine Processing (Tsinghua University)
The Nb5+ doped (Bi0.5Na0.5)TiO3 (BNT) ceramics were manufactured by a conventional solid state reaction method. The influence of Nb5+ doping on the sintering, microstructure and various electrical properties of BNT ceramics was investigated. The results of X-ray diffraction show that the solubility limit of Nb5+ in the BNT lattice is less than 3%. Additionally, Nb5+ doping produces significant effects on the densification and grain growth of BNT ceramics. Various electrical properties of BNT ceramics are obviously changed with doping a small amount of Nb5+. The ferroelectric and piezoelectric properties display enhanced values at a low doping level. The formation of A-site vacancies is considered as the reason for the changed ferroelectric and electromechanical behavior.
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