期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 20, 期 7, 页码 604-608出版社
SPRINGER
DOI: 10.1007/s10854-008-9772-4
关键词
-
类别
资金
- National Science Council of Republic of China [NSC 95-2221-E009-120, NSC 96-2221E270-003]
ZnO nanowire arrays have been grown on the ZnO film-coated silicon (100) substrates by hydrothermal method, and the deposited nanowires are found to have a uniform size distribution with sharp hexagonal-shaped tips. The structural and optical properties of the nanowires were investigated using atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and cathodoluminescence (CL) techniques. The XRD and SEM results demonstrate that the well-aligned ZnO nanowires are single crystalline structure formed along the c-axis orientation. TEM analysis further confirms that the ZnO nanowires are highly preferred grown along the (002) crystal plane. The spacing between adjacent (002) lattice planes is estimated as 0.52 nm. The optical properties of the nanowires were measured using CL after annealing in oxygen and nitrogen atmospheres at 550 A degrees C for various times. The CL spectra in the visible spectrum exhibit two weak deep-level emission bands that may be attributed to the intrinsic or extrinsic defects. It can be observed that the ZnO nanowires show different optical behaviors after various annealing times. The dependence of the optical properties on the annealing conditions is also discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据