期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 20, 期 -, 页码 363-366出版社
SPRINGER
DOI: 10.1007/s10854-008-9625-1
关键词
-
GaBi (x) As1-x layers with compositions of 0 < x < 0.11 were grown on GaAs substrates by low-temperature molecular-beam-epitaxy. Energy bandgaps as narrow as 0.74 eV were documented in the layers with the largest Bi-content. This material is also characterized by very short, picosecond carrier lifetimes and is prospective for applications in optoelectronic terahertz radiation components activated by femtosecond pulses of near infrared lasers.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据