Investigation of defects in Cu(In,Ga)(S,Se)2 films using the photocurrent decay technique

In the present work we demonstrate the possibility of using the photoinduced current transient spectroscopy (PICTS) method to study the defects in Cu(In,Ga)(S,Se)(2) films which can be used as an absorber layer in solar cells (SCs). The conducted experiments enable one to determine the parameters ( activation energies and effective capture cross-sections) of the defects revealed in the films under study.