期刊
JOURNAL OF MATERIALS SCIENCE
卷 48, 期 7, 页码 3013-3026出版社
SPRINGER
DOI: 10.1007/s10853-012-7080-0
关键词
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资金
- European Union [FP7-NMP-2009-CSA-233484]
- Ministry of Science and Technology, Israel
- Ministry of Research, France
- Russell Berrie Institute for Nanotechnology at the Technion
- Office of Naval Research Grant [N00014-11-1-0678]
- MRSEC Program of the National Science Foundation [DMR-0520425]
- National Science Foundation [DMR-0520425]
The orientation relationships (ORs) of copper crystals on a sapphire substrate equilibrated at 1253 K are presented. They barely depend on the procedures used in sample preparation, i.e. dewetting of a copper film in the liquid state or in the solid state. The most frequent OR found is Cu(111) || Al2O3 and Cu within few degrees from Al2O3[0001]. A secondary, lower frequency OR is also observed: Cu(001) || Al2O3 with Cu within a few degrees from either Al2O3 or Al2O3[0001]. These ORs do not follow the Fecht and Gleiter model which proposes that dense directions of the metal should align with dense directions of the oxide. On annealing, even at a temperature about half of the melting point of sapphire, fast diffusion of sapphire at the copper/sapphire interface is observed: the copper particles tend to achieve their interfacial equilibrium shapes by sinking into the substrate, and sapphire ridges form at the triple line. Finally, it is shown that the Cu(111) || Al2O3 interface remains flat at the atomic scale, and is therefore part of the copper/sapphire equilibrium interfacial shape.
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