4.6 Article

Dense PLZT films grown on nickel substrates by PVP-modified sol-gel method

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JOURNAL OF MATERIALS SCIENCE
卷 48, 期 3, 页码 1180-1185

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DOI: 10.1007/s10853-012-6857-5

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  1. U.S. Department of Energy, Vehicle Technologies Program [DE-AC02-06CH11357]

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We have successfully grown ferroelectric Pb-0.92 La0.08Zr0.52Ti0.48O3 (PLZT) films on base metal foils by chemical solution deposition using sol-gel solutions containing polyvinylpyrrolidone. Under zero-bias field, we measured a dielectric constant of approximate to 820 and dielectric loss of approximate to 0.06 at room temperature, and a dielectric constant of approximate to 1250 and dielectric loss of approximate to 0.03 at 150 degrees C. In addition, leakage current density of approximate to 1.5 x 10(-8) A/cm(2), remanent polarization of approximate to 11.2 mu C/cm(2), and coercive field of approximate to 40.6 kV/cm were measured at room temperature on a approximate to 3-mu m-thick PLZT film grown on LaNiO3-buffered nickel substrate. Finally, energy density approximate to 25 J/cm(3) was measured from the P-E hysteresis loop at an applied field of 2 x 10(6) V/cm.

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